2SC2411KXLT1 Datasheet, PDF (1/4 Pages) WILLAS ELECTRONIC CORP – Medium Power Transistor

WILLAS
FM120-M+
2SC2411KxLT_T1_HRU
Medium Power Transistor
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
Package outline
NPN silicon better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
SOD-123H
optimize board space.
FE• ALoTwURpoEwer loss, high efficiency.
ƽ^•E^Hpiⁱt^gax^hia^cl^up^rl^ra^enⁿa^tr^cty^ap^pe^{ability, low forward voltage drop.}
• High surge capability.
ƽ_•C_Gom_uapl_re_dm_rie_nn_gta_fory_r
to 2SA1036K
overvoltage
protection.
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
ƽ•WUeltrdaechliagrhe-sthpaetetdheswmiatctehriniagl .of product compliance with RoHS requirements.
•_PS_bi_-l_Fic_ro_en_ee_pp_ait_ca_kx_aia_gl_ep_ila_sn_aa_vr_ac_ih_laip_b,_lemetal silicon junction.
•_RL_oe_Ha_Sd-_pfr_re_oe_dup_ca_trt_fs_orm_pe_ae_ct_ke_inn_gvi_cro_on_dm_e e_sn_ut_fa_fixl s_”t_Gan_” dards of
MIL-STD-19500 /228
•^HR^ao^loH^gS^epⁿro^frd^eu^ect^pf^ro^or^dp^ua^cc^tki^fn^og^r c^po^ad^ce^kisⁿu^gffi^cx^o"^dG^e" ^{suffix “H”}
Halogen free product for packing code suffix "H"
0.071(1.8)
SOT– 23^0.056(1.4)
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
D^•E^CV^aIC^seE^:M^MA^oR^ldK^edIN^pG^lasA^tN^icD^{, S}O^OR^DD^-1E²R^3HING INFORMATION _,
• Te_Dr_em_vi_in_ca_els :Plated terminal_Ms,_as_rko_il_nd_gerable per MIL-_SS_hT_iD_pp-7_in5_g0
Method 2026
•
2SC2411KQLT1
Polarity : Indicated
by
CQ
cathode band
3000/Tape&Reel
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
3
COLLECTOR
0.031(0.8) Typ.
1
BASE
Dimensions in inches and (millimeters)
• M2SoCun2t4i1n1gKPRoLsTit1ion : Any CR
3000/Tape&Reel
2
EMITTER
• Weight : Approximated 0.011 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating_Ms _Aat_X2_I5_M℃_UMam_Rb_Aie_Tn_INt t_Gem_Sp₍e_Tr_Aat₌ur₂e₅u_°Cnl₎ess otherwise specified.
Single phase ha_Plf_aw_raav_me_e, _t6_e0_rHz, resistive of inductive_Slo_ya_md_b. _ol
Limits
Unit
For ca_Cpa_oc_lleiti_cv_te_orl_-o_ba_ad_s,_ede_vr_oa_ltt_ae_gc_eurrent by 20%
VCBO
40
V
Collector-emitteRr AvoTlItNagGeS
SYVM_CEB_OOL FM120-M3H2FM130-MH FMV140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
MarkingECmoitdter-base voltage
VEBO
12 5 13
V14
15
16
18
10
115 120
MaximuCmolRleecctuorrrecnutrPreenatk Reverse Voltage
VRIR_CM
20 0.5 30 A*40
50
60
80
100
150
200 Vo
MaximuCmolRleMcStorVoplotawgeer dissipation
VRPMCS
14 0.2 21 W28
35
42
56
70
105
140 ^Vo
Maximu^Jm^unD^cC^tioBⁿlo^tc^ek^min^pg^eV^rao^tlt^ua^rg^ee
Maximu^Sm^toA^rave^gr^eag^tee^mF^po^erw^raa^tr^ud^rR^eectified Current
V^TDC^j
20 ¹⁵⁰ 30 ^°C40
50
60
80
100
150
200 ^Vo
T_IOstg
-55~+150
°C
1.0
Am
PsuepaekriFm^*_Eo^P_pLr^Cwo_Esa^m_eCrdd^u_TS^s_oR^t_nuIrⁿ_rCga^oet_A^t_eCd^b_Lu^e_lorCra^eed_Hn^xt^c_(AJ8^e_E.R^e3D^d_AmE^e_CCs^d_Ts^._{minEegRtlheIoS}hda)_Tlf_ICsin_Se₍-_Tw_Aav₌e_25°CIF)SM
30
Am
Typical The^Prm^ara^al R^me^es^tis^eta^r nce (Note 2)
Symbo_Rl_ΘJA Min.
Typ Max. Unit
Co₄n₀ditions
℃/
Typical_CJu_on_llc_et_cio_ton_rC_-ba_ap_sa_ecit_ba_rn_ec_ae_k(_dN_oo_wte_n 1_v)_oltage
Operati_Cng_olT_lee_cm_top_re_-r_ea_mtu_ir_te_teR_r a_bn_rege_{akdown voltage}
BV_CBO^CJ
40
BV_CEO^TJ
32
-
-
-55_-to +125 _-
V
V
I¹_C²=⁰100µA
I_C=1mA
-55 to +150
P
℃
Storage_ET_me_im_ttep_re_-r_ba_atu_sr_ee _bR_ra_en_ag_ke_{down voltgae}
BV_EB^T_O^STG 5
-
-
V
- 65_IEt₌o₁+₀1₀7_µ5_A
℃
Collector cutoff current
I_CBO
-
-
1
µA
V_CB=20V
Emitter cuto^Cff^Hc^Au^Rrr^Ae^Cnt^TERISTICS
I_EB^S_O^{YMBOL FM}-^{120-MH FM1}-^{30-MH FM1}1^{40-MH FM}µ¹A^{50-MH FM160}V^-_E^M_B^H=4^FV^{M180-MH FM1100-MH FM1150-MH FM1200-MH UN}
Maximu_Dm_CF_co_urw_rra_er_nd_tV_to_ralt_na_sg_fe_ea_r t_r1_a._t0_ioA DC
h_FE ^VF
2
- ^0.50390
- ^0.70 V_CE=3V ,I_C =⁰1^.0⁸0⁵mA
0.9
0.92 Vo
Maximu_Cm_olA_lcv_ee_tr_oa_rg_-e_emRe_itv_tee_rrs_se_aC_tuu_rr_ar_te_iont_na_vt_ol@_tagT_eA=25℃ _VCE(sat)IR
-
-
0.4
V
I_C⁰/^.I⁵_B=500mA/50mA
mA
Rated D_TC_raB_nslo_ic_tik_oi_ng_frV_eo_qlt_ua_eg_ne_cy
@T A=125℃ _fT
-
250
-
MHz
V¹_C⁰_E=5V,I_E=-20mA,f=100MHz
Output capacitance
NOTES:
C_ob
-
6.0
-
pF
V_CB=10V,I_E=0A,f=1MHz
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
hFE values are classified as follows:
Item
QR
hFE
120~270 180~390
2012-06
2012-
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.