MMBT2222AT_10 Datasheet, PDF (4/6 Pages) Weitron Technology – Plastic-Encapsulate Transistors NPN Silicon

MMBT2222AT
200
I _C /I _B = 10
100
T_J= 25°C
70
t _r @V _CC= 30V
50
t _d@V _EB(off) = 2.0V
30
t _d@V _EB(off) =0
20
10
7.0
5.0
3.0
2.0
5.0 7.0 10
20 30 50 70 100
200 300 500
I _C , COLLECTOR CURRENT (mA)
Figure 5. Turn–On Time
10
R _S = OPTIMUM
I _C = 1.0 mA, R _S = 150 Ω
RS = SOURCE
8
I _C = 500 µA, R _S = 200 Ω
RS = RESISTANCE
I _C = 100 µA, R _S = 2.0 kΩ
6
I _C = 50 µA, R _S = 4.0 kΩ
4
2
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
f , FREQUENCY (kHz)
Figure 7. Frequency Effects
50 100
30
20
C _eb
10
7.0
5.0
C _cb
3.0
2.0
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50
REVERSE VOLTAGE (VOLTS)
Figure 9. Capacitance
100
70
t ’_s= t _s–1/8 t _f
50
30
t_f
20
V _CC= 30V
I _C/ I _B= 10
I _B1 = I _B2
T_J= 25°C
10
7.0
5.0
5.0 7.0 10
20 30 50 70 100
200 300 500
I _C , COLLECTOR CURRENT (mA)
Figure 6. Turn - Off Time
10
f = 1.0 kHz
8
I _C=50 µA
100 µA
500 µA
6
1.0 mA
4
2
0
50 100 200
500 1.0k 2.0k 5.0k 10k 20k 50k 100k
R _S, SOURCE RESISTANCE (kΩ)
Figure 8. Source Resistance Effects
500
V _CE = 20 V
300
T _J = 25°C
200
100
70
50
1.0
2.0 3.0 5.0 7.0 210
20 30 50 70 100
I _C , COLLECTOR CURRENT (mA)
Figure 10. Current– Gain Bandwidth Product
WEITRON
4/6
http://www.weitron.com.tw
28-Apr-2010