MMBT2222AT_10 Datasheet, PDF (1/6 Pages) Weitron Technology – Plastic-Encapsulate Transistors NPN Silicon

MMBT2222AT
Plastic-Encapsulate Transistors
NPN Silicon
P b Lead(Pb)-Free
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
COLLECTOR
3
1
BASE
2
EMITTER
Symbol
VCEO
VCBO
VEBO
IC
3
1
2
SC-89
(SOT-523F)
Value
40
75
6.0
600
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristics
Total Device Dissipation FR-5 Board ⁽¹⁾
TA=25 C
Thermal Resistance, Junction to Ambient
Junction and Storage, Temperature
DEVICE MARKING
MMBT2222AT=1P
Symbol
Max
Unit
PD
150
mW
R_θJA
833
C/W
TJ,Tstg
-55 to +150
C
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC= 10 mAdc, IB=0)⁽²⁾
Collector-Base Breakdown Voltage (IC= 10 µAdc, IE=0)
Emitter-Base Breakdown Voltage (IE= -10 µAdc, IC=0)
Base Cutoff Current (VCE= 60 Vdc, VEB= 3.0 V)
Collector Cutoff Current (VCE= 60 Vdc, VEB= 3.0 V)
V(BR)CEO ₄₀
-
V
V(BR)CBO ₇₅
-
V
V(BR)EBO _6.0
-
V
IBL
-
20
nA
ICEX
-
100
nA
WEITRON
1/6
http://www.weitron.com.tw
28-Apr-2010