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MMBT2222AT_10 Datasheet, PDF (2/6 Pages) Weitron Technology – Plastic-Encapsulate Transistors NPN Silicon
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MMBT2222AT
ON CHARACTERISTICS2
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 150 mAdc, VCE = 10 Vdc)
(IC = 500 mAdc, VCE = 10 Vdc)
Collector −Emitter Saturation Voltage
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
Base −Emitter Saturation Voltage
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
Voltage Feedback Ratio
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
Small −Signal Current Gain
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
Output Admittance
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
Noise Figure
(VCE = 10 Vdc, IC = 100 Adc, RS = 1.0 k ohms, f = 1.0 kHz)
HFE
−
35
−
50
−
75
−
100
−
40
−
VCE(sat)
−
0.3
V
−
1.0
VBE(sat)
0.6
1.2
V
−
2.0
fT
Cobo
Cibo
hie
hre
hfe
hoe
NF
250
−
MHz
−
8.0
pF
−
30
pF
0.25
−
1.25
4.0
k
X 10− 4
75
375
−
25
200
mhos
−
4.0
dB
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
(VCC = 3.0 Vdc, VBE = − 0.5 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc)
td
−
10
ns
tr
−
25
Storage Time
Fall Time
(VCC = 30 Vdc, IC = 150 mAdc,
IB1 = IB2 = 15 mAdc)
ts
−
tf
−
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint.
2. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%.
225
ns
60
WEITRON
2/6
http://www.weitron.com.tw
28-Apr-2010
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