MMBT2222 Datasheet, PDF (4/6 Pages) Samsung semiconductor – NPN (GENERAL PURPOSE TRANSISTOR)

MMBT2222
MMBT2222A
C0llector-Cutoff Current vs
Ambient Temperature
500
100
VCB=40V
10
1
0.1
25
50
75
100
125
150
TA-AMBIENT TEMPERATURE ( C)
Emitter Transition and Output
Capacitance vs Reverse Bias Voltage
20
16
12
8
4
0.1
f=1MHz
Cte
Cob
1
10
100
REVERSE BIAS VOLTAGE (V)
Turn On and Turn Off Times
vs Collector Current
400
IB1=IB2=
1c
10
320
Vcc=25V
240
160
80
0
10
tON
100
Ic-COLLECTOR CURRENT(mA)
tOFF
1000
Switching Times
vs Collector Current
400
IB1=IB2=
1c
10
320
Vcc=25V
240
160
80
0
10
ts
tr
tf
td
100
1000
Ic-COLLECTOR CURRENT(mA)
Power Dissipation vs
Ambient Temperature
1
0.75
0.5
SOT-23
0.25
0
0
25
50
75
100
125
150
TEMPERATURE( C)
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