MMBT2222 Datasheet, PDF (3/6 Pages) Samsung semiconductor – NPN (GENERAL PURPOSE TRANSISTOR)

MMBT2222
MMBT2222A
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
Min
SWITCHING CHARACTERISTICS (MMBT2222A only)
Delay Time
Rise Time
(VCC=30 Vdc, VBE=(off )=-0.5Vdc,
IC=150 mAdc, IB1=15 mAdc)
Storage Time
Fall Time
(VCC=30 Vdc, IC=150 mAdc,
IB1=IB2=15 mAdc)
3.Pulse Test:Pulse Width ^<_ 300 µs, Duty Cycle^<_ 2.0%.
4.fT is defined as the frequency at which Ihfe extrapolates to unity.
td
-
tr
-
ts
-
tf
-
Max
Unit
10
ns
25
225
ns
60
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
500
VCE=5V
400
125 C
300
200
25 C
100
-40 C
0
0.1
0.3
1
3
10
30
100 300
Ic-COLLECTOR CURRENT (mA)
Collector- Emitter Saturation
Voltage vs Collector Current
0.4
b=10
0.3
0.2
0.1
1
125 C
25 C
-40 C
10
100
500
Ic-COLLECTOR CURRENT (mA)
Base-Emitter Saturation
Voltage vs Collector Current
1
b=10
0.8
-40 C
25 C
0.6
125 C
0.4
1
10
100
500
Ic-COLLECTOR CURRENT (mA)
Base-Emitter ON Voltage vs
Collector Current
1
VCE=5V
0.8
-40 C
0.6
25 C
125 C
0.4
0.2
0.1
1
10
25
Ic-COLLECTOR CURRENT (mA)
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