MMBT2222 Datasheet, PDF (2/6 Pages) Samsung semiconductor – NPN (GENERAL PURPOSE TRANSISTOR)

MMBT2222
MMBT2222A
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
Min
ON CHARACTERISTICS
DC Current Gain
(IC=0.1 mAdc, VCE=10 Vdc)
(IC=1.0 mAdc, VCE=10 Vdc)
(IC=10 mAdc, VCE=10 Vdc)
(IC=10 mAdc, VCE=10 Vdc, TA=-55 C)
(IC=150 mAdc, VCE=10 Vdc) (3)
(IC=150 mAdc, VCE=1.0Vdc) (3)
(IC=500 mAdc, VCE=10 Vdc) (3)
Collector-Emitter Saturation Voltage (3)
(IC=150 mAdc, IB=15mAdc)
(IC=500 mAdc, IB=50mAdc)
Base-Emitter Saturation Voltage (3)
(IC=150 mAdc, IB=15mAdc)
(IC=500 mAdc, IB=50mAdc)
hFE
35
50
75
MMBT2222A ONLY
35
100
50
MMBT2222
30
MMBT2222A
40
MMBT2222
VCE(sat)
-
MMBT2222A
-
MMBT2222
-
MMBT2222A
-
VBE(sat)
-
MMBT2222
0.6
MMBT2222A
MMBT2222
-
MMBT2222A
-
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product (4)
(IC=20 mAdc, VCE=20 Vdc, f=100MHz)
Output Capacitance
(VCB=10 Vdc, IE=0, f=1.0MHz)
Input Capacitance
(VEB=0.5 Vdc, IC=0, f=1.0MHz)
Input Impedance
(IC=1.0 mAdc, VCE=10 Vdc, f=1.0 kHz)
(IC=10 mAdc, VCE=10 Vdc, f=1.0 kHz)
Voltage Feeback Radio
(IC=1.0 mAdc, VCE=10 Vdc, f=1.0 kHz)
(IC=10 mAdc, VCE=10 Vdc, f=1.0 kHz)
S mall-S ignal C urrent G ain
(IC =1.0 mAdc, V C E =10V dc, f=1.0 kHz)
(IC =10 mAdc, V _{C E} =10V dc, f=1.0 kHz)
Output Admittance
(IC=1.0 mAdc, VCE=10Vdc, f=-1.0kHz)
(IC=10 mAdc, VCE=10Vdc, f=-1.0kHz)
Collector Base Time Constant
(IE=20 mAdc, VCB=20 Vdc, f=31.8 MHz)
MMBT2222
MMBT2222A
MMBT2222
MMBT2222A
MMBT2222
MMBT2222A
MMBT2222A
MMBT2222A
MMBT2222A
MMBT2222A
MMBT2222A
MMBT2222A
MMBT2222A
MMBT2222A
MMBT2222A
fT
250
300
Cobo
-
Cibo
-
-
hie
2.0
0.25
hre
-
-
hfe
50
75
hoe
5.0
25
rb, Cc
-
Noise Figure
(IC=100 µAdc, VCE=10Vdc, RS=1.0kΩ, f=1.0kHz)
MMBT2222A
NF
-
Max
Unit
-
-
-
-
-
300
-
-
-
0.4
Vdc
0.3
1.6
1.0
1.3
Vdc
1.2
2.6
2.0
-
MHz
-
8.0
pF
30
pF
25
8.0
1.25
kΩ
8.0
x 10-4
4.0
300
-
375
µmhos
35
200
150
ps
4.0
dB
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