W4501DW Datasheet, PDF (3/4 Pages) Weitron Technology – Epitaxial Planer Transistor Silicon NPN

W4501DW
500
Ta=25 C
200
100
50
V CE =5V
3V
1V
20
10
0.2 0.5 1 2
5 10 20 50 100 200
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs collector current
0.5
Ta=25 C
0.2
IC /IB=50
0.1
20
10
0.05
0.02
0.01
0.2 0.5 1 2 5 10 20 50 100 200
COLLECTOR CURRENT : IC(mA)
Fig. 6 Collector-emitter saturation
voltage vs. collector current
Ta=25 C
500
V CE =6V
200
100
50
0.5 1 2
5 10 20 50 100
EMITTER CURRENT : IE (mA)
Fig.8 Gain bandwidth product vs emitter current
500
Ta=100 C
V CE =5V
200
25 C
55 C
100
50
20
10
0.2 0.5 1 2 5 10 20 50 100 200
COLLECTOR CURRENT : IC (mA)
Fig.5 DC current gain vs collector current
0.5
IC /IB=10
0.2
0.1
0.05
Ta=100 C
25 C
55 C
0.02
0.01
0.2 0.5 1 2 5 10 20 50 100 200
COLLECTOR CURRENT : IC (mA)
Fig.7 Collector-emitter saturation
voltage vs. collector current
20
10
Cib
5
Ta=25 C
f=1MHz
IE =0A
IC =0A
2
Cob
1
0.2 0.5 1 2
5 10 20 50
COLLECTOR TO BASE VOLTAGE : V_CB(V)
EMITTER TO BASE VOLTAGE : V_EB (V)
Fig.9 Collector output capacitance vs collector-base voltage
Emitter input capacitance vs emitter-base voltage
WEITRON
3/4
http://www.weitron.com.tw
30-Nov-05