W4501DW Datasheet, PDF (2/4 Pages) Weitron Technology – Epitaxial Planer Transistor Silicon NPN

W4501DW
Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
Min
Typ
On Characteristics
DC Current Gain
(V_CE= 6.0Vdc, I_C= 1.0mAdc)
Collector-Emitter Saturation Voltage
(I_C= 50mAdc, I_B= 5.0mAdc)
hFE
120
-
VCE(sat)
-
-
Small-signal Characteristics
Current-Gain-Bandwidth Product
(V_CE= 12 Vdc, I_E= -2.0 mAdc, f=100MHz)
fT
-
180
Output Capacitance
(V_CE= 12 Vdc, f=1.0MHz)
Cobo
-
2.0
Max
Unit
560
-
0.4
Vdc
-
MHz
3.5
PF
Electrical Characteristics Curve
50
V CE =6V
20
10
5
2
1
0.5
0.2
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE TO EMITTER VOLTAGE : V_BE (V)
Fig.1 Grounded emitter propagation characteristics
10
Ta=25˚C
8
30 A
27 A
24 A
21 A
6
18 A
15 A
4
12 A
9A
6A
2
3A
0
IB =0A
0
4
8
12
16
20
COLLECTOR TO EMITTER VOLTAGE : V_CE (V)
Fig.3 Grounded emitter output characteristics
100
Ta=25˚C
80
60
40
20
0.50mA
0₀._.⁴₄⁵₀^m_m^A_A
0.35mA
0.30mA
0.25mA
0.20mA
0.15mA
0.10mA
0.05mA
0
IB =0A
0
0.4
0.8
1.2
1.6
2.0
COLLECTOR TO EMITTER VOLTAGE : V_CE (V)
Fig.2 Grounded emitter outputcharacteristics
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30-Nov-05