W4501DW Datasheet, PDF (1/4 Pages) Weitron Technology – Epitaxial Planer Transistor Silicon NPN

Epitaxial Planer Transistor Silicon NPN
P b Lead(Pb)-Free
Features:
* Both 2SC2412K Chip x 2 in a SOT-363
W4501DW
3
2
1
4
5
6
NPN+NPN
6 ₅₄
1
23
SOT-363(SC-88)
Maximum Ratings
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Thermal Characteristics
Characteristics
(1)
Total Device Dissipation TA=25˚C
Thermal Resistance, Junction to Ambient
Junction and Storage, Temperature
Symbol
VCEO
VCBO
VEBO
IC
Symbol
PD
R_θJA
TJ,Tstg
Value
50
60
7
150
Max
380
328
-55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
˚C/W
˚C
Device Marking
W4501DW=5H
Electrical Characteristics (TA=25 C Unless Otherwise noted)
Characteristics
Symbol
Off Characteristics
Collector-Emitter Breakdown Voltage⁽²⁾ (IC=1.0mAdc,IB=0)
V(BR)CEO
Collector-Base Breakdown Voltage (IC=50 uAdc, IE=0)
V(BR)CBO
Emitter-Base Breakdown Voltage (IE=50 uAdc, IC=0)
V(BR)EBO
Emitter Cutoff Current (VEB =7.0Vdc)
Collector Cutoff Current (VCB=60Vdc)
1. Device Mounted FR4 glass epoxy printed circuit board using the minimun recommended footprint.
2. Pulse Test:Pulse Width^<=300uS, Duty Cycle^<=2.0%
IEBO
ICBO
WEITRON
1/4
http://www.weitron.com.tw
Min
Max
Unit
50
-
Vdc
60
-
Vdc
7.0
-
Vdc
-
0.1
µAdc
-
0.1
µAdc
30-Nov-05