MMBTA64 Datasheet, PDF (3/4 Pages) Samsung semiconductor – PNP (DARLINGTON TRANSISTOR)

MMBTA64
200
100
70
50
30
20
10
7.0
5.0
3.0
2.0
-0.3
Ta =125 C
25 C
-55 C
-0.5 -0.7 -1.0
VCE =-2.0V
-5.0V
-2.0 -3.0 -5.0 -7.0 -10
-20 -30
COLLECTOR CURRENT : IC (mA)
FIG.1 DC Current Gain
-50 -70 -100
-10V
-200 -300
-2.0
Ta =25 C
-1.6
VBE(sat) @IC/IB=100
-1.2
VBE(on) @VCE=-5.0V
-0.8 ^VCE(sat) ^@IC^/IB=1000
IC/IB=100
-0.4
0
-0.3-0.5 -1.0 -2 -3 -5 -10 -20 -30 -50 -100 -200-300
COLLECTOR CURRENT : IC (mA)
FIG.2 "On" Voltage
-2.0
Ta =25 C
-1.8
-1.6
IC =-10mA -50mA -100mA -175mA ^-300mA
-1.4
-1.2
-1.0
-0.8
-0.6
-0.1-0.2-0.5-1 -2 -5 -10-20 -50-100-200-500-1K-2K -5K-10K
BASE CURRENT : IB (uA)
FIG.3 Collector Saturatiion Region
10
VCE =-5.0V
4.0 ^f=100MHz
3.0 ^{Ta =25 C}
2.0
1.0
0.4
0.2
0.1
-1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 -1K
COLLECTOR CURRENT : IC (mA)
FIG.4 High Frequency Current Gain
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