MMBTA64 Datasheet, PDF (2/4 Pages) Samsung semiconductor – PNP (DARLINGTON TRANSISTOR)

MMBTA64
ELECTRICAL CHARACTERISTICS (Ta=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
Min
Max
Unit
ON CHARACTERISTICS
(IC = -10 mAdc, VCE= -5.0 Vdc)
(IC = -100 mAdc, VCE= -5.0Vdc)
hFE
10000
-
20000
-
Collector-Emitter Saturation Voltage
(IC= -100 mAdc, IB= -0.1mAdc)
Base-Emitter On Voltage
(IC= -100 mAdc, VCE = -5.0mAdc)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product
(IC= -10 mAdc, VCE=-5.0 Vdc, f=100 MHz)
VCE(sat)
-
VBE(on)
-
-1.5
Vdc
-2.0
Vdc
fT
125
-
MHz
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