MMBTA64 Datasheet, PDF (1/4 Pages) Samsung semiconductor – PNP (DARLINGTON TRANSISTOR)

Darlington Transistor
PNP Silicon
MMBTA64
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT-23
MAXIMUM RATINGS (Ta=25 C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Symbol
VCES
VCBO
VEBO
IC
Value
-30
-30
-10
-500
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristics
Total Device Dissipation FR-5 Board⁽¹⁾
TA =25 C
Derate above 25 C
Thermal Resistance, Junction Ambient
Junction and Storage, Temperature
Symbol
PD
R _θJA
T_J, Tstg
Value
225
1.8
556
-55 to +150
Unit
mW
mW/ C
C/W
C
Device Marking
MMBTA63=2U , MMBTA64=2V
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Emitter Breakdown Voltage(IC =-100 uAdc, IB=0)
Collector Cufoff Current(VCB=-30Vdc, IE=0)
Emitter Cufoff Current(VEB =-10Vdc, IC=0)
1. FR-5=1.0 ^I I0.75^I I0.062 in
2. Pulse Test: Pulse Width<_ 300us, Duty Cycle <_ 2.0%
Symbol
Min Max
Unit
V(BR)CEO
-30
-
Vdc
ICBO
IEBO
-
-0.1
uAdc
-
-0.1
uAdc
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