3DD13002B Datasheet, PDF (3/5 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR (NPN)

3DD13002B
WE ITR ON
80
60
40
30
25 C
20
VCE =2V
10
8
6
4
0.02 0.03 0.050.07 0.1 0.2 0.3 0.5 0.7 1
2
IC , COLLECTOR CURRENT(AMP)
FIG.1 DC Current Gain
1.4
VBE(sat) @IC/IB =5
1.2
1
25 C
0.8
0.6
0.4
0.020.03 0.050.07 0.1 0.2 0.3 0.5 0.7 1
2
IC , COLLECTOR CURRENT(AMP)
FIG.3 Base-Emitter Voltage
10
5
2
1
0.5
0.2
TC=25 C
0.1
0.0
5
0.02
0.01
5
10
20
50 100 200 300 500
VCE ,COLLECTOR-EMITTER VOLTAGE(V)
FIG.5 Active Region Safe Operation Area
WEITRON
http://www.weitron.com.tw
2
1.6
IC=0.2A
1.2
T_J =25 C
0.8
0.4
0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 2
IB , BASE CURRENT(AMP)
FIG.2 Collector Saturation Region
3.5
3.0
2.5
IC/IB =5
2.0
1.5
1.0
0.5
0
0.01
0.1
0.5 1
2
IC, COLLECTOR CURRENT(AMP)
FIG.4 Collector-Emitter Saturation Region
1.6
1.2
0.8
TJ ^<_ 100 C
IB1 =1A
0.4
VBE(off) =6V
5V
3V
0
1.5V
0 100 200 300 400 500 600 700 800
VCE ,COLLECTOR-EMITTER CLAMP VOLTAGE(V)
FIG.6 Reverse Bias Safe Operating Area