3DD13002B Datasheet, PDF (2/5 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR (NPN)

3DD13002B
WE ITR ON
Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
Min
On Characteristics
DC Current Gain
(IC= 100 mAdc, VCE=10Vdc)
(IC= 200 mAdc, VCE= 10Vdc)
(IC= 10 mAdc, VCE= 10Vdc)
hFE(1)
20
hFE(2)
9
hFE(3)
6
Collector-Emitter Saturation Voltage
(IC= 200 mAdc, IB= 40 mAdc)
VCE(sat)
-
Base-Emitter Saturation Voltage
(IC= 200 mAdc, IB= 40 mAdc)
Current-Gain-Bandwidth Product
(IC= 100 mAdc, VCE= 10 Vdc, f=1.0MHz)
VBE(sat)
-
fT
5.0
Max
Unit
25
-
40
-
.
-
0.8
Vdc
1.1
Vdc
-
MHz
Switching Characteristics
Storage Time
Fall Time
VCC=100V, IC =1A
IB1=-IB2=200mA
ts
-
2.5
us
tf
-
0.5
us
Classification of h_FE(2)
Rank
Range
9-15
15-20
20-25
25-30
30-35
35-40
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