3DD13002B Datasheet, PDF (1/5 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR (NPN)

Switch Mode NPN Transistors
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base VOltage
Collector Current
Total Device Dissipation TA=25 C
Junction Temperature
Storage, Temperature
Symbol
VCEO
VCBO
VEBO
IC
PD
Tj
Tstg
3DD13002B
TO-92
1. EMITTER
1
2. COLLECTOR
3. BASE
2
3
Value
Unit
400
Vdc
600
Vdc
6.0
Vdc
1.0
Adc
1.0
W
150
C
-55 to +150
C
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB=0)
Collector-Base Breakdown Voltage (IC= 100 uAdc, IE=0)
Emitter-Base Breakdown Voltage (IE= 100 uAdc, IC=0)
Collector Cutoff Current (VCB= 600 Vdc, IE=0)
Emitter Cutoff Current (VEB= 6.0Vdc, IC=0)
Symbol
Min
Max
Unit
V(BR)CEO
400
-
Vdc
V(BR)CBO
600
-
Vdc
-
V(BR)EBO
6.0
Vdc
ICBO
IEBO
-
100
uAdc
-
100
uAdc
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