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| WCMB4016R4X Datasheet, PDF (4/12 Pages) Weida Semiconductor, Inc. – 256K x 16 Static RAM | |||
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AC Test Loads and Waveforms
R1
VCC
OUTPUT
30 pF
INCLUDING
JIG AND
SCOPE
ALL INPUT PULSES
VCC Typ
GND
10%
90%
90%
10%
R2
Rise Time:
Fall Time:
1 V/ns
1 V/ns
WCMB4016R4X
Equivalent to:
THÃVENIN EQUIVALENT
OUTPUT
RTH
V
Parameters
R1
R2
RTH
VTH
1.8V
13500
10800
6000
0.80
UNIT
Ohms
Ohms
Ohms
Volts
Data Retention Characteristics (Over the Operating Range)
Parameter
Description
Conditions
Min.
Typ.[4]
Max.
Unit
VDR
ICCDR
tCDR[5]
tR[6]
VCC for Data Retention
Data Retention Current
Chip Deselect to Data
Retention Time
1.0
VCC = 1.0V
CE > VCC â 0.2V,
VIN > VCC â 0.2V or VIN < 0.2V
0
1.95
V
1
8
µA
ns
Operation Recovery Time
tRC
ns
Data Retention Waveform[7]
VCC
CE or
BHE,BHE
VCC(min.)
tCDR
DATA RETENTION MODE
VDR > 1.0 V
VCC(min.)
tR
Notes:
6. Full device operation requires linear VCC ramp from VDR to VCC(min) > 100 µs or stable at VCC(min) > 100 µs.
7. BHE.BLE is the AND of both BHE and BLE. Chip can be deselected by either disabling the chip enable signals or by disabling both BHE and BLE.
Page 4 of 12
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