WCMB4016R4X Datasheet, PDF (3/12 Pages) Weida Semiconductor, Inc. – 256K x 16 Static RAM

WCMB4016R4X
Electrical Characteristics Over the Operating Range
Parameter
V_OH
V_OL
V_IH
Description
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Test Conditions
I_OH = -0.1 mA
I_OL = 0.1 mA
V_CC = 1.65V
V_CC = 1.65V
V_IL
Input LOW Voltage
I_IX
Input Leakage Current GND < V_I < V_CC
I_OZ
Output Leakage
GND < V_O < V_CC, Output Dis-
Current
abled
V_CC Operating Supply f = f_MAX = 1/t_RC V_CC = 1.95V
I_CC
Current
f = 1 MHz
I_OUT = 0 mA
CMOS levels
Automatic CE
CE > V_CC − 0.2V,
I_SB1
Power-Down Cur-
V_IN > V_CC − 0.2V, V_IN < 0.2V
rent— CMOS Inputs f = f_MAX (Address and Data Only),
f = 0 (OE, WE, BHE, and BLE)
Automatic CE
CE > V_CC − 0.2V
I_SB2
Power-Down Cur-
V_IN > V_CC − 0.2V or V_IN < 0.2V,
rent— CMOS Inputs f = 0, V_CC = 1.95V
WCMB4016R4X
Min. Typ.^[4] Max.
1.4
0.2
1.4
V_CC +
0.2V
−0.2
0.4
−1
+1
−1
+1
2
6
0.5
3
1
10
Unit
V
V
V
V
µA
µA
mA
mA
µA
Capacitance^[5]
Parameter
C_IN
C_OUT
Description
Input Capacitance
Output Capacitance
Test Conditions
T_A = 25°C, f = 1 MHz,
V_CC = V_CC(typ)
Max.
Unit
6
pF
8
pF
Thermal Resistance
Description
Test Conditions
Thermal Resistance
(Junction to Ambient)^[5]
Still Air, soldered on a 4.25 x 1.125 inch, 4-layer printed
circuit board
Thermal Resistance
(Junction to Case)^[5]
Note:
5. Tested initially and after any design or process changes that may affect these parameters.
Symbol
Θ_JA
Θ_JC
BGA
55
16
Unit
°C/W
°C/W
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