WCMB4016R4X Datasheet, PDF(1/12 Page) Weida Semiconductor, Inc.

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WCMB4016R4X Datasheet, PDF (1/12 Pages) Weida Semiconductor, Inc. – 256K x 16 Static RAM

WCMB4016R4X

Features

â¢ Low voltage range:

â 1.65Vâ1.95V

â¢ Ultra-low active power

â Typical Active Current: 0.5 mA @ f = 1 MHz

â Typical Active Current: 2 mA @ f = fmax (70 ns speed)

â¢ Low standby power

â¢ Easy memory expansion with CE and OE features

â¢ Automatic power-down when deselected

â¢ CMOS for optimum speed/power

Functional Description

The WCMB4016R4X is a high-performance CMOS static

RAM organized as 256K words by 16 bits. This device features

advanced circuit design to provide ultra-low active current.

This device is ideal for portable applications such as cellular

telephones. The device also has an automatic power-down

feature that significantly reduces power consumption by 99%

when addresses are not toggling. The device can also be put

into standby mode when deselected (CE HIGH or both BLE

Logic Block Diagram

DATA IN DRIVERS

A10

256K x 16

RAM Array

2048 X 2048

256K x 16 Static RAM

and BHE are HIGH). The input/output pins (I/O0 through I/O15)

are placed in a high-impedance state when: deselected (CE

HIGH), outputs are disabled (OE HIGH), both Byte High En-

able and Byte Low Enable are disabled (BHE, BLE HIGH), or

during a write operation (CE LOW and WE LOW).

Writing to the device is accomplished by taking Chip Enable

(CE) and Write Enable (WE) inputs LOW. If Byte Low Enable

(BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is

written into the location specified on the address pins (A0

through A17). If Byte High Enable (BHE) is LOW, then data

from I/O pins (I/O8 through I/O15) is written into the location

specified on the address pins (A0 through A17).

Reading from the device is accomplished by taking Chip En-

able (CE) and Output Enable (OE) LOW while forcing the Write

Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then

data from the memory location specified by the address pins

will appear on I/O0 to I/O7. If Byte High Enable (BHE) is LOW,

then data from memory will appear on I/O8 to I/O15. See the

Truth Table at the back of this data sheet for a complete de-

scription of read and write modes.

The WCMB4016R4X is available in a 48-ball FBGA package.

I/O0âI/O7

I/O8âI/O15

COLUMN DECODER

Power -Down

Circuit

BHE

BLE

BHE

BLE

Created January 17, 2002

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