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WCFS1008C3E Datasheet, PDF (3/8 Pages) Weida Semiconductor, Inc. – 128K x 8 Static RAM
WCFS1008C3E
WCFS1008C9E
AC Test Loads and Waveforms
R1 480Ω
5V
OUTPUT
30 pF
INCLUDING
JIG AND
SCOPE
(a)
R1 480Ω
5V
OUTPUT
R2
255Ω
5 pF
INCLUDING
JIG AND
SCOPE
(b)
R2
255Ω
Equivalent to: THÉVENIN EQUIVALENT
OUTPUT
167Ω
1.73V
3.0V
GND
≤ 3 ns
ALL INPUT PULSES
90%
10%
90%
10%
≤ 3 ns
Switching Characteristics[5] Over the Operating Range
WCFS1008C3E
WCFS1008C9E-15
Parameter
Description
Min.
Max.
Unit
READ CYCLE
tRC
Read Cycle Time
15
ns
tAA
Address to Data Valid
15
ns
tOHA
Data Hold from Address Change
3
ns
tACE
CE1 LOW to Data Valid, CE2 HIGH to Data Valid
15
ns
tDOE
OE LOW to Data Valid
7
ns
tLZOE
tHZOE
tLZCE
tHZCE
OE LOW to Low Z
OE HIGH to High Z[6, 7]
CE1 LOW to Low Z, CE2 HIGH to Low Z[7]
CE1 HIGH to High Z, CE2 LOW to High Z[6, 7]
0
ns
7
ns
3
ns
7
ns
tPU
CE1 LOW to Power-Up, CE2 HIGH to Power-Up
0
ns
tPD
CE1 HIGH to Power-Down, CE2 LOW to Power-Down
WRITE CYCLE[8]
15
ns
tWC
Write Cycle Time[9]
15
ns
tSCE
CE1 LOW to Write End, CE2 HIGH to Write End
12
ns
tAW
Address Set-Up to Write End
12
ns
tHA
Address Hold from Write End
0
ns
tSA
Address Set-Up to Write Start
0
ns
tPWE
WE Pulse Width
12
ns
tSD
Data Set-Up to Write End
8
ns
tHD
tLZWE
tHZWE
Data Hold from Write End
WE HIGH to Low Z[7]
WE LOW to High Z[6, 7]
0
ns
3
ns
7
ns
Note:
5. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified
IOL/IOH and 30-pF load capacitance.
6. tHZOE, tHZCE, and tHZWE are specified with a load capacitance of 5 pF as in part (b) of AC Test Loads. Transition is measured ±500 mV from steady-state voltage.
7. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device.
8. The internal write time of the memory is defined by the overlap of CE LOW, and WE LOW. CE and WE must be LOW to initiate a write, and the transition of either of
these signals can terminate the write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the write.
9. The minimum write cycle time for Write Cycle no. 3 (WE controlled, OE LOW) is the sum of tHZWE and tSD
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