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WCFS1016V1C Datasheet, PDF (2/9 Pages) Weida Semiconductor, Inc. – 64K x 16 Static RAM
WCFS1016V1C
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage on VCC to Relative GND[1] .... –0.5V to +4.6V
DC Voltage Applied to Outputs
in High Z State[1] ......................................–0.5V to VCC+0.5V
DC Input Voltage[1]...................................–0.5V to VCC+0.5V
Current into Outputs (LOW) ........................................ 20 mA
Static Discharge Voltage............................................ >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current..................................................... >200 mA
Operating Range
Range
Ambient Temperature[2]
Commercial
0°C to +70°C
VCC
3.3V ± 10%
Electrical Characteristics Over the Operating Range
Parameter
VOH
VOL
VIH
VIL
IIX
IOZ
ICC
ISB1
ISB2
Description
Output HIGH
Voltage
Output LOW
Voltage
Input HIGH
Voltage
Input LOW
Voltage[1]
Input Load
Current
Output Leakage
Current
VCC Operating
Supply Current
Automatic CE
Power-Down
Current
—TTL Inputs
Automatic CE
Power-Down
Current
—CMOS Inputs
Test Conditions
VCC = Min.,
IOH = –4.0 mA
VCC = Min., IOL = 8.0 mA
GND < VI < VCC
GND < VI < VCC,
Output Disabled
VCC = Max.,
IOUT = 0 mA,
f = fMAX = 1/tRC
Max. VCC,
CE > VIH
VIN > VIH or
VIN < VIL, f = fMAX
Max. VCC,
CE > VCC – 0.3V,
VIN > VCC – 0.3V,
or VIN < 0.3V,
f=0
Capacitance[3]
Parameter
Description
Test Conditions
CIN
Input Capacitance
TA = 25°C, f = 1 MHz
COUT
Output Capacitance
Note:
1. VIL (min.) = –2.0V for pulse durations of less than 20 ns.
2. TA is the “instant on” case temperature.
3. Tested initially and after any design or process changes that may affect these parameters.
WCFS1016V1C 12ns
Min.
Max.
Unit
2.4
V
0.4
V
2.2
VCC+ 0.3V
V
–0.3
0.8
V
–1
+1
µA
–1
+1
µA
150
mA
40
mA
5
mA
Max.
Unit
6
pF
8
pF
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