WCFS1016V1C Datasheet, PDF(1/9 Page) Weida Semiconductor, Inc.

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WCFS1016V1C Datasheet, PDF (1/9 Pages) Weida Semiconductor, Inc. – 64K x 16 Static RAM

1 021B V33

WCFS1016V1C

Features

â¢ 3.3V operation (3.0Vâ3.6V)

â¢ High speed

â tAA = 12 ns

â¢ CMOS for optimum speed/power

â¢ Automatic power-down when deselected

â¢ Independent control of upper and lower bits

â¢ Available in 400-mil SOJ

Functional Description

The WCFS1016V1C is a high-performance CMOS static RAM

organized as 65,536 words by 16 bits. This device has an au-

tomatic power-down feature that significantly reduces power

consumption when deselected.

Writing to the device is accomplished by taking Chip Enable

(CE) and Write Enable (WE) inputs LOW. If Byte Low Enable

(BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is

written into the location specified on the address pins (A0

Logic Block Diagram

DATA IN DRIVERS

64K x 16

RAM Array

512 X 2048

COLUMN DECODER

64K x 16 Static RAM

through A15). If Byte High Enable (BHE) is LOW, then data

from I/O pins (I/O9 through I/O16) is written into the location

specified on the address pins (A0 through A15).

Reading from the device is accomplished by taking Chip En-

able (CE) and Output Enable (OE) LOW while forcing the Write

Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then

data from the memory location specified by the address pins

will appear on I/O1 to I/O8. If Byte High Enable (BHE) is LOW,

then data from memory will appear on I/O9 to I/O16. See the

truth table at the back of this data sheet for a complete descrip-

tion of read and write modes.

The input/output pins (I/O1 through I/O16) are placed in a

high-impedance state when the device is deselected

(CE HIGH), the outputs are disabled (OE HIGH), the BHE and

BLE are disabled (BHE, BLE HIGH), or during a write opera-

tion (CE LOW, and WE LOW).

The WCFS1016V1C is available in 400-mil-wide SOJ packag-

es.

I/O1 â I/O8

I/O9 â I/O16

BHE

BLE

Pin Configurations

SOJ

Top View

A4 1

A3 2

A2 3

A1 4

A0 5

CE 6

I/O1 7

I/O2 8

I/O3 9

I/O4 10

VCC 11

VSS 12

I/O5 13

I/O6 14

I/O7 15

I/O8 16

WE 17

A15 18

A14 19

A13 20

A12 21

NC 22

44 A5

43 A6

42 A7

41 OE

40 BHE

39 BLE

38 I/O16

37 I/O15

36 I/O14

35 I/O13

34 VSS

33 VCC

32 I/O12

31 I/O11

30 I/O10

29 I/O9

28 NC

27 A8

26 A9

25 A10

24 A11

23 NC

Selection Guide

Maximum Access Time (ns)

Maximum Operating Current (mA)

Maximum CMOS Standby Current (mA)

WCFS1016V1C-12

150

Revised April 19, 2002

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