W3EG72129S-JD3 Datasheet, PDF (5/12 Pages) White Electronic Designs Corporation – 1GB - 2x64Mx72 DDR SDRAM REGISTERED w/PLL

White Electronic Designs
W3EG72129S-JD3
PRELIMINARY
IDD SPECIFICATIONS AND TEST CONDITIONS
Recommended operating conditions, 0°C ≤ TA ≤ 70°C, VCCQ = 2.5V ± 0.2V, VCC = 2.5V ± 0.2V
Includes DDR SDRAM component only
Parameter
Symbol Conditions
Operating Current
IDD0 One device bank; Active - Precharge;
tRC=tRC (MIN); tCK=tCK (MIN); DQ,DM
and DQS inputs changing once per
clock cycle; Address and control
inputs changing once every two
cycles.
Operating Current
IDD1 One device bank; Active-Read-
Precharge Burst = 2; tRC=tRC (MIN);
tCK=tCK (MIN); lOUT = 0mA; Address
and control inputs changing once per
clock cycle.
Precharge Power-
IDD2P All device banks idle; Power-down
Down Standby Current
mode; tCK=tCK (MIN); CKE=(low)
Idle Standby Current
IDD2F CS# = High; All device banks idle;
tCK=tCK (MIN); CKE = high; Address
and other control inputs changing
once per clock cycle. VIN = VREF for
DQ, DQS and DM.
Active Power-Down
Standby Current
IDD3P One device bank active; Power-
Down mode; tCK (MIN); CKE=(low)
Active Standby Current IDD3N CS# = High; CKE = High; One device
bank; Active-Precharge; tRC=tRAS
(MAX); tCK=tCK (MIN); DQ, DM and
DQS inputs changing twice per clock
cycle; Address and other control
inputs changing once per clock cycle.
Operating Current
IDD4R Burst = 2; Reads; Continuous burst;
One device bank active; Address
and control inputs changing once
per clock cycle; TCK= TCK (MIN); lOUT
= 0mA.
Operating Current
IDD4W Burst = 2; Writes; Continuous burst;
One device bank active; Address
and control inputs changing once per
clock cycle; tCK=tCK (MIN); DQ,DM
and DQS inputs changing once per
clock cycle.
Auto Refresh Current IDD5 tRC = tRC (MIN)
Self Refresh Current
IDD6 CKE ≤ 0.2V
Operating Current
IDD7A Four bank interleaving Reads (BL=4)
with auto precharge with tRC=tRC
(MIN); tCK=tCK (MIN); Address and
control inputs change only during
Active Read or Write commands.
DDR400@
CL=3
Max
4950
5490
180
1980
1620
2160
5580
5670
8370
180
10260
DDR333@
CL=2.5
Max
4140
4680
180
1620
1260
1800
4770
4590
7020
180
9090
DDR266@
CL=2
Max
4140
4680
180
1620
1260
1800
4770
4590
7020
180
9000
DDR266@
CL=2.5
Max
4140
4680
180
1620
1260
1800
4770
4590
7020
180
9000
DDR200@
CL=2
Max
4140
Units
mA
4680
mA
180
rnA
1620
mA
1260
mA
1800
mA
4770
mA
4590
rnA
7020
mA
180
mA
9000
mA
October 2005
Rev. 3
5
White Electronic Designs Corporation • [phone] • www.wedc.com