W3EG2128M72AFSR-D3 Datasheet, PDF (4/13 Pages) White Electronic Designs Corporation – 2GB - 2x128Mx72 DDR SDRAM REGISTERED ECC, w/PLL, FBGA

W3EG2128M72AFSR-D3
White Electronic Designs
-AD3
FINAL
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Voltage on any pin relative to VSS
VIN, VOUT
Voltage on VCC supply relative to VSS
VCC, VCCQ
Storage Temperature
TSTG
Power Dissipation
PD
Short Circuit Current
I0S
Note:
• Permanent device damage may occur if ‘ABSOLUTE MAXIMUM RATINGS’ are exceeded.
• Functional operation should be restricted to recommended operating condition.
• Exposure to higher than recommended voltage for extended periods of time could affect device reliability
Value
-0.5 - 3.6
-1.0 - 3.6
-55 - +150
27
50
DC CHARACTERISTICS
0°C ≤ TA ≤ 70°C, VCC = 2.5V ± 0.2V
Parameter
Supply Voltage*
Supply Voltage*
Reference Voltage
Termination Voltage
Input High Voltage
Input Low Voltage
Output High Current
Output Low Current
Note:
* DDR400 VCC = VCCQ = 2.6V ± 0.1V.
Symbol
VCC
VCCQ
VREF
VTT
VIH
VIL
IOH
IOL
Min
2.3
2.3
.49 x VCCQ
VREF - .04
VREF + 0.15
-0.3
16.8
16.8
CAPACITANCE
TA = 25°C, f = 1MHz, VCC = 2.5V ± 0.2V
Parameter
Symbol
Input Capacitance (A0-A12)
CIN1
Input Capacitance (RAS#, CAS#, WE#)
CIN2
Input Capacitance (CKE0)
CIN3
Input Capacitance (CK0, CK0#)
CIN4
Input Capacitance (CS0#)
CIN5
Input Capacitance (DQM0-DQM8)
CIN6
Input Capacitance (BA0-BA1)
CIN7
Data input/output capacitance (DQ0-DQ63)(DQS)
COUT
Data input/output capacitance (CB0-CB7)
COUT
Note:
• These parameters serve to support both SAMSUNG and MICRON components based modules.
Max
2.7
2.7
.51 x VCCQ
VREF + .04
VCCQ + 0.3
VREF - 0.15
—
—
Max
5.5
5.5
5.5
5.5
5.5
13.0
5.5
13.0
13.0
Units
V
V
°C
W
mA
Unit
V
V
V
V
V
V
mA
mA
Unit
pF
pF
pF
pF
pF
pF
pF
pF
pF
January 2006
Rev. 3
4
White Electronic Designs Corporation • [phone] • www.wedc.com