SIA513DJ Datasheet, PDF (9/14 Pages) Vishay Siliconix – N- and P-Channel 20-V (D-S) MOSFET

New Product
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.4
I_D = 2.5 A
0.3
SiA513DJ
Vishay Siliconix
10
T_J = 150 °C
T_J = 25 °C
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.2
0.2
T_A = 125 °C
0.1
T_A = 25 °C
0.0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source
20
1.1
15
I_D = 250 µA
1.0
10
0.9
5
0.8
0.7
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
10
Limited by
R _DS(on)*
0
0.001 0.01
0.1
1
10
100 1000
Pulse (s)
Single Pulse Power
100 µs
1
1 ms
10 ms
0.1
T_A = 25 °C
Single Pulse
BVDSS Limited
100 ms
1s
10 s
DC
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 70443
S-80437-Rev. B, 03-Mar-08
www.vishay.com
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