SIA513DJ Datasheet, PDF (5/14 Pages) Vishay Siliconix – N- and P-Channel 20-V (D-S) MOSFET

New Product
SiA513DJ
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.30
I_D = 3.4 A
0.25
0.20
10
T_J = 150 °C
0.15
0.10
T_A = 125 °C
T_J = 25 °C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.4
1.3
I_D = 250 µA
1.2
1.1
1.0
0.9
0.8
0.7
0.6
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
0.05
T_A = 25 °C
0.00
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
20
15
10
5
0
0.001 0.01
0.1
1
10
100 1000
Pulse (s)
Single Pulse Power
Document Number: 70443
S-80437-Rev. B, 03-Mar-08
10 Limited by
R _DS(on)*
100 µs
1
1 ms
10 ms
0.1
T_A = 25 °C
Single Pulse
BVDSS Limited
0.01
0.1
1
10
100 ms
1 s, 10 s
DC
100
V_DS - Drain-to-Source Voltage (V)
* V_GS minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
5