SI5513CDC Datasheet, PDF (9/12 Pages) Vishay Siliconix – N- and P-Channel 20-V (D-S) MOSFET

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.30
0.24
10
0.18
T_J = 150 °C
T_J = 25 °C
1
0.12
0.06
Si5513CDC
Vishay Siliconix
I_D = - 2.4 A
T_J = 125 °C
T_J = 25 °C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.2
0.00
0
2
4
6
8
10
12
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
60
1.1
50
1.0
40
0.9
30
I_D = 250 µA
0.8
20
0.7
10
0.6
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0
0.0001 0.001 0.01 0.1
1
10
100
Time (s)
Single Pulse Power
10
Limited by R_DS(on)*
1
0.1
T_A = 25 °C
Single Pulse
BVDSS Limited
100 µs
1 ms
10 ms
100 ms
1 s, 10 s
DC
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Case
Document Number: 68806
S-82490-Rev. B, 13-Oct-08
www.vishay.com
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