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SI5513CDC Datasheet, PDF (2/12 Pages) Vishay Siliconix – N- and P-Channel 20-V (D-S) MOSFET
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Si5513CDC
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
VGS = 0 V, ID = - 250 µA
VDS Temperature Coefficient
ΔVDS/TJ
ID = 250 µA
ID = - 250 µA
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
ID = 250 µA
ID = - 250 µA
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
VDS = VGS, ID = - 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 12 V
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Dynamica
IDSS
ID(on)
RDS(on)
gfs
VDS = 20 V, VGS = 0 V
VDS = - 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 55 °C
VDS = - 20 V, VGS = 0 V, TJ = 55 °C
VDS ≥ 5 V, VGS = 4.5 V
VDS ≤ - 5 V, VGS = - 4.5 V
VGS = 4.5 V, ID = 4.4 A
VGS = - 4.5 V, ID = - 2.4 A
VGS = 2.5 V, ID = 3.6 A
VGS = - 2.5 V, ID = - 1.9 A
VDS = 10 V, ID = 4.4 A
VDS = - 10 V, ID = - 2.4 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
N-Channel
VDS = 10 V, VGS = 0 V, f = 1 MHz
P-Channel
VDS = - 10 V, VGS = 0 V, f = 1 MHz
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS = 10 V, VGS = 5 V, ID = 4.4 A
Qg
VDS = - 10 V, VGS = - 5 V, ID = - 2.4 A
N-Channel
VDS = 10 V, VGS = 4.5 V, ID = 4.4 A
Qgs
P-Channel
Qgd
VDS = - 10 V, VGS = - 4.5 V, ID = - 2.4 A
Gate Resistance
Rg
f = 1 MHz
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
20
- 20
0.6
- 0.6
10
-8
0.6
1.3
Typ. Max. Unit
V
23.7
- 19.5
- 3.5
2.8
1.5
- 1.5
100
- 100
1
-1
10
- 10
mV/°C
V
nA
µA
A
0.045 0.055
0.120 0.150
Ω
0.065 0.085
0.204 0.255
12
S
5
285
252
65
pF
62
30
45
2.8 4.2
3.9 5.6
2.6 3.9
3.6
5.4
nC
0.7
0.6
0.5
1.2
3
6
Ω
6.5
13
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Document Number: 68806
S-82490-Rev. B, 13-Oct-08
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