SI5513CDC Datasheet, PDF (5/12 Pages) Vishay Siliconix – N- and P-Channel 20-V (D-S) MOSFET

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.10
0.08
10
0.06
T_J = 150 °C
T_J = 25 °C
0.04
1
0.02
Si5513CDC
Vishay Siliconix
I_D = 4.4 A
T_J = 125 °C
T_J = 25 °C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.3
1.1
0.9
I_D = 250 µA
0.7
0.5
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
0.00
0
2
4
6
8
10
12
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
30
25
20
15
10
5
0
10^-4
10^-3
10^-2
10^-1
1
10
Time (s)
Single Pulse Power
Document Number: 68806
S-82490-Rev. B, 13-Oct-08
Limited by R_DS(on)*
10
100 µs
1
1 ms
0.1
T_A = 25 °C
Single Pulse
BVDSS Limited
10 ms
100 ms
1 s, 10 s
DC
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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