SI4816BDY Datasheet, PDF (9/9 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

New Product
Si4816BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Reverse Current vs. Junction Temperature
20
10
10
1
0.1
30 V
24 V
0.01
SCHOTTKY
Forward Voltage Drop
T_J = 150_C
T_J = 25_C
0.001
0.0001
0
25
50
75
100 125 150
T_J − Temperature (_C)
1
0.0
0.3
0.6
0.9
1.2
1.5
V_F − Forward Voltage Drop (V)
200
160
120
80
40
0
0
Capacitance
C_oss
6
12
18
24
30
V_DS − Drain-to-Source Voltage (V)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?73026.
Document Number: 73026
S-41510—Rev. A, 09-Aug-04
www.vishay.com
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