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SI4816BDY Datasheet, PDF (5/9 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
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New Product
Si4816BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Safe Operating Area
100
*rDS(on) Limited
IDM Limited
2
1
Duty Cycle = 0.5
10
1
ID(on)
Limited
1 ms
10 ms
100 ms
0.1
TC = 25_C
Single Pulse
1s
10 s
BVDSS Limited
dc
0.01
0.1
1
10
100
VDS − Drain-to-Source Voltage (V)
*VGS u minimum VGS at which rDS(on) is specified
Normalized Thermal Transient Impedance, Junction-to-Ambient
CHANNEL-1
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10−4
10−3
2
1
Duty Cycle = 0.5
10−2
10−1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 100_C/W
3. TJM − TA = PDMZthJA(t)
4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10−4
10−3
10−2
10−1
1
10
Square Wave Pulse Duration (sec)
Document Number: 73026
S-41510—Rev. A, 09-Aug-04
www.vishay.com
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