SI4816BDY Datasheet, PDF (4/9 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4816BDY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
CHANNEL-1
Gate Charge
6
V_DS = 15 V
5
I_D = 6.8 A
4
3
2
1
0
0
2
4
6
8
10
Q_g − Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
40
On-Resistance vs. Junction Temperature
1.6
V_GS = 10 V
I_D = 6.8 A
1.4
1.2
1.0
0.8
0.6
−50 −25 0
25 50 75 100 125 150
T_J − Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.05
T_J = 150_C
10
T_J = 25_C
0.04
0.03
I_D = 6.8 A
0.02
0.01
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD − Source-to-Drain Voltage (V)
Threshold Voltage
0.4
0.2
−0.0
I_D = 250 mA
−0.2
−0.4
−0.6
−0.8
−50 −25
0 25 50 75 100 125 150
T_J − Temperature (_C)
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4
0.00
0
2
4
6
8
10
V_GS − Gate-to-Source Voltage (V)
Single Pulse Power, Junction-to-Ambient
100
80
60
40
20
0
0.001
0.01
0.1
1
10
Time (sec)
Document Number: 73026
S-41510—Rev. A, 09-Aug-04