SI4569DY Datasheet, PDF (9/12 Pages) Vaishali Semiconductor – N- and P-Channel 40-V (D-S) MOSFET

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.15
0.12
Si4569DY
Vishay Siliconix
I_D = 6 A
T_J = 150 °C
T_J = 25 °C
10
1
0.0
0.3
0.6
0.9
1.2
1.5
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.7
0.09
0.06
T_A = 125 °C
0.03
T_A = 25 °C
0.00
0 1 2 3 4 5 6 7 8 9 10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
0.5
40
I_D = 250 µA
0.3
30
I_D = 5 mA
0.1
20
- 0.1
10
- 0.3
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
Document Number: 73586
S09-0393-Rev. B, 09-Mar-09
10 _{Limited by RDS(on)*}
1
1 ms
10 ms
0.1
T_A = 25 °C
Single Pulse
100 ms
1s
10 s
DC
0.01
0.0
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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