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SI4569DY Datasheet, PDF (2/12 Pages) Vaishali Semiconductor – N- and P-Channel 40-V (D-S) MOSFET
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Si4569DY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
VGS = 0 V, ID = - 250 µA
VDS Temperature Coefficient
ΔVDS/TJ
ID = 250 µA
ID = - 250 µA
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
ID = 250 µA
ID = - 250 µA
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
VDS = VGS, ID = - 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 16 V
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Dynamica
IDSS
ID(on)
RDS(on)
gfs
VDS = 40 V, VGS = 0 V
VDS = - 40 V, VGS = 0 V
VDS = 40 V, VGS = 0 V, TJ = 55 °C
VDS = - 40 V, VGS = 0 V, TJ = 55 °C
VDS = 5 V, VGS = 10 V
VDS = - 5 V, VGS = - 10 V
VGS = 10 V, ID = 6 A
VGS = - 10 V, ID = - 6 A
VGS = 4.5 V, ID = 4.8 A
VGS = - 4.5 V, ID = - 4.9 A
VDS = 15 V, ID = 6 A
VDS = - 15 V, ID = - 6 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
N-Channel
VDS = 20 V, VGS = 0 V, f = 1 MHz
P-Channel
VDS = - 20 V, VGS = 0 V, f = 1 MHz
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS = 20 V, VGS = 10 V, ID = 5 A
Qg
VDS = - 20 V, VGS = - 10 V, ID = - 5 A
N-Channel
VDS = 20 V, VGS = 4.5 V, ID = 5 A
Qgs
P-Channel
Qgd
VDS = - 20 V, VGS = - 4.5 V, ID = - 5 A
Gate Resistance
Rg
f = 1 MHz
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
40
- 40
0.6
- 0.8
20
- 20
Typ.a Max.
37
- 38
-5
4.0
2.0
- 2.2
100
- 100
1
-1
10
- 10
0.022
0.024
0.026
0.031
20
17
0.027
0.029
0.032
0.039
855
1505
105
230
65
175
21
32
41
62
9.6 14.5
21
31
2.3
4.5
3.2
9.2
2.5 3.8
6.5
10
Unit
V
nA
µA
A
Ω
S
pF
nC
Ω
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Document Number: 73586
S09-0393-Rev. B, 09-Mar-09
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