SI4569DY Datasheet, PDF (8/12 Pages) Vaishali Semiconductor – N- and P-Channel 40-V (D-S) MOSFET

Si4569DY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
2.0
V_GS = 10 thru 4 V
16
1.6
12
1.2
8
4
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.040
0.8
T_C = 125 °C
0.4
25 °C
- 55 °C
0.0
0.0
0.8
1.6
2.4
3.2
4.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
2500
0.035
0.030
V_GS = 4.5 V
2000
C_iss
1500
0.025
0.020
V_GS = 10 V
0.015
0
4
8
12
16
20
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 6 A
8
V_DS = 10 V
6
V_DS = 20 V
V_DS = 30 V
4
2
0
0
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8
9
18
27
36
45
Q_g - Total Gate Charge (nC)
Gate Charge
1000
500
C_rss
0
0
8
C_oss
16
24
32
40
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
I_D = 6 A
1.6
1.4
1.2
V_GS = 10 V
V_GS = 4.5 V
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 73586
S09-0393-Rev. B, 09-Mar-09