SI4559ADY_09 Datasheet, PDF (9/15 Pages) Vishay Siliconix – N- and P-Channel 60-V (D-S) MOSFET

Si4559ADY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
T_J = 150 °C
10
T_J = 25 °C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.6
0.40
0.35
0.30
0.25
I_D = 3.1 A
0.20
0.15
0.10
0.05
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
0.4
40
I_D = 250 µA
0.2
30
0.0
20
- 0.2
10
- 0.4
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
10
Limited
by R_DS(on)*
0
10^-3
10^-2
10^-1
1
10
Time (s)
Single Pulse Power
100 600
I_DM Limited
P(t) = 0.0001
Document Number: 73624
S09-0393-Rev. B, 09-Mar-09
1
P(t) = 0.001
I_D(on)
Limited
0.1
T_A = 25 °C
Single Pulse
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
BVDSS Limited
DC
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Case
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9