SI4559ADY_09 Datasheet, PDF (1/15 Pages) Vishay Siliconix – N- and P-Channel 60-V (D-S) MOSFET

Si4559ADY
Vishay Siliconix
N- and P-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
N-Channel 60
0.058 at V_GS = 10 V
0.072 at V_GS = 4.5 V
0.120 at V_GS = - 10 V
P-Channel - 60
0.150 at V_GS = - 4.5 V
I_D (A)^{a Q}g ^(Typ.)
5.3
6 nC
4.7
- 3.9
- 3.5
8 nC
S_{1 1}
G_{1 2}
S_{2 3}
G_{2 4}
SO-8
8 ^D1
7 ^D1
6 ^D2
5 ^D2
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET^® Power MOSFET
• 100 % R_g and UIS Tested
APPLICATIONS
• CCFL Inverter
D₁
S₂
G₂
G₁
Top View
Ordering Information: Si4559ADY-T1-E3 (Lead (Pb)-free)
Si4559ADY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S₁
N-Channel MOSFET
D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)
V_DS
60
- 60
V
V_GS
± 20
T_C = 25 °C
5.3
- 3.9
T_C = 70 °C
T_A = 25 °C
I_D
4.3
4.3^{b, c}
- 3.2
- 3.0^{b, c}
T_A = 70 °C
3.4^{b, c}
- 2.4^{b, c}
Pulsed Drain Current (10 µs Pulse Width)
Source Drain Current Diode Current
Pulsed Source-Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
I_DM
20
- 25
A
T_C = 25 °C
T_A = 25 °C
I_S
2.6
1.7^{b, c}
- 2.8
- 1.7^{b, c}
I_SM
20
- 25
L = 0.1 mH
I_AS
11
E_AS
6.1
15
11
mJ
T_C = 25 °C
3.1
3.4
T_C = 70 °C
T_A = 25 °C
P_D
2
2^{b, c}
2.2
W
2^{b, c}
T_A = 70 °C
1.3^{b, c}
1.3^{b, c}
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient^{b, d}
t ≤ 10 s
R_thJA
Maximum Junction-to-Foot (Drain)
Steady State
R_thJF
Notes:
a. Based on T_C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 110 °C/W for N-Channel and P-Channel.
N-Channel
Typ. Max.
55
62.5
33
40
P-Channel
Typ. Max.
53
62.5
30
37
Unit
°C/W
Document Number: 73624
S09-0393-Rev. B, 09-Mar-09
www.vishay.com
1