SI4559ADY_09 Datasheet, PDF (8/15 Pages) Vishay Siliconix – N- and P-Channel 60-V (D-S) MOSFET

Si4559ADY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
25
25
V_GS = 10 thru 5 V
20
20
15
4V
10
5
3V
0
012345678
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0
V_GS = 4.5 V
V_GS = 10 V
5
10
15
20
25
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
V_DS = 30 V
I_D = 3.1 A
8
6
4
2
0
0
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8
3
6
9
12
15
Q_g - Total Gate Charge (nC)
Gate Charge
15
10
T_C = 125 °C
5
25 °C
- 55 °C
0
0
1
2
3
4
5
6
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
1000
800
C_iss
600
400
200
C_oss
0 ^Crss
0
10
20
30
40
50
60
V_DS - Drain-to-Source Voltage (V)
Capacitance
2.2
V_GS = 10 V
2.0 I_D = 3.1 A
1.8
1.6
1.4
1.2
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 73624
S09-0393-Rev. B, 09-Mar-09