SI4554DY Datasheet, PDF (9/14 Pages) Vishay Siliconix – N- and P-Channel 40 V (D-S) MOSFET

P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
10
T_J = 150 °C
1
0.15
I_D = 8 A
0.12
0.09
Si4554DY
Vishay Siliconix
0.1
0.01
T_J = 25 °C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.8
0.06
T_J = 125 °C
0.03
T_J = 25 °C
0.00
0 1 2 3 4 5 6 7 8 9 10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
0.5
0.2
- 0.1
40
I_D = 250 μA
30
I_D = 5 mA
20
10
- 0.4
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
Limited by R_DS(on)*
10
1 ms
1
10 ms
100 ms
0.1
T_A = 25 °C
Single Pulse
1s
10 s
BVDSS Limited ^DC
0.01
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 63660
www.vishay.com
S11-2527-Rev. A, 26-Dec-11
9
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000