SI4554DY Datasheet, PDF (4/14 Pages) Vishay Siliconix – N- and P-Channel 40 V (D-S) MOSFET

Si4554DY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
40
10
V_GS = 10 V thru 4 V
8
30
V_GS = 3 V
6
20
T_C = 25 °C
4
10
0
0
0.5
1
1.5
2
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.035
2
0
0
1000
T_C = 125 °C
T_C = - 55 °C
0.6
1.2
1.8
2.4
3
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.030
0.025
0.020
V_GS = 4.5 V
V_GS = 8 V
V_GS = 10 V
0.015
0
10
20
30
40
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 6.8 A
8
V_DS = 32 V
6
V_DS = 20 V
4
V_DS = 10 V
2
0
0
3
6
9
12
15
Q_g - Total Gate Charge (nC)
Gate Charge
800
C_iss
600
400
200
0
0
C_rss
C_oss
10
20
30
40
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
I_D = 6.8 A
1.6
1.4
V_GS = 10 V; 4.5 V
1.2
1.0
0.8
0.6
- 50 - 25
0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
www.vishay.com
Document Number: 63660
4
S11-2527-Rev. A, 26-Dec-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000