SI4554DY Datasheet, PDF (5/14 Pages) Vishay Siliconix – N- and P-Channel 40 V (D-S) MOSFET

N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.05
Si4554DY
Vishay Siliconix
I_D = 6.8 A
T_J = 150 °C
10
1
T_J = 25 °C
0.04
0.03
0.02
T_J = 125 °C
T_J = 25 °C
0.1
0.0
0.3
0.6
0.9
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.9
0.01
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
60
48
1.6
36
I_D = 250 μA
1.3
24
1
12
0.7
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R_DS(on)*
10
1
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
100 μs
1 ms
10 ms
100 ms
0.1
1s
T_A = 25 °C
Single Pulse
10 s
DC
BVDSS Limited
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 63660
www.vishay.com
S11-2527-Rev. A, 26-Dec-11
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000