DG636_10 Datasheet, PDF (9/13 Pages) Vishay Siliconix – 0.5 pC Charge Injection, 100 pA Leakage, Dual SPDT Analog Switch

TEST CIRCUITS
DG636
Vishay Siliconix
A0
A1
50 Ω
V+
V+
S1A or S2A
S2A or S2B
VS1A or VS2A
V_S2A or V_S2B
V+
ENABLE
D1 or D2
GND
V-
300 Ω
V-
V_O
35 pF
V_A0,A1
V_CC
0V
50 %
V_S1A or V_S2A
V_O
t_TRANS
50 %
90 %
t_r < 5 ns
t_f < 5 ns
t_TRANS
Figure 1. Transition Time
V+
V+
A0
S1A or S2A
V+
A1
S1B or S2B
50 Ω
ENABLE
GND
D1 or D2
V-
300 Ω
V-
VO
35 pF
V_ENABLE
VCC
0V
50 %
VS1A or VS2A
V_O
0V
t ON
S1A or S2A ON
90 %
50 %
Figure 2. Enable Switching Time
t_r < 5 ns
t_f < 5 ns
90 %
t OFF
A0
A1
50 Ω
V+
V+
SxA - SxB
V+
V⁺
ENABLE
D1 or D2
GND
V-
300 Ω
V-
V_O
35 pF
V_A0,A1
V_CC
0V
V_SxA or V_SxB
V_O
50 %
80 %
0V
t_D
tr < 5 ns
tf < 5 ns
Figure 3. Break-Before-Make
Document Number: 69901
S10-1815-Rev. D, 02-Aug-10
www.vishay.com
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