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DG636_10 Datasheet, PDF (6/13 Pages) Vishay Siliconix – 0.5 pC Charge Injection, 100 pA Leakage, Dual SPDT Analog Switch
DG636
Vishay Siliconix
SPECIFICATIONS FOR SINGLE SUPPLY
Parameter
Symbol
Dynamic Characteristics
Test Conditions
Unless Otherwise Specified
V+ = 3 V, V- = 0 V
VIN A0, A1 and ENABLE = 1.4 V, 0.6 Va Temp.b
Transition Time
Enable Turn-On Time
Enable Turn-Off Time
tTRANS
tON(EN)
tOFF(EN)
VS(CLOSE) = 3.0 V, VS(OPEN) = 0.0 V,
RL = 300 , CL = 35 pF
Room
Full
Room
Full
Room
Full
Break-Before-Make-
Time
tBMM
Room
Full
Charge Injection
Off-Isolatione
Crosstalke
Bandwidthe
Total Harmonic Distortion
Source Off Capacitancee
Drain Off Capacitancee
Channel On
Capacitancee
Q
OIRR
XTALK
BW
THD
CS(off)
CD(off)
CD(on)
CL = 1 nF, RGEN = 0 , VGEN = 0 V
f = 10 MHz, RL = 50 , CL = 5 pF
RL = 50 
Signal = 1 VRMS, 20 Hz to 20 kHz,
RL = 600 
Full
Room
Room
Room
Room
f = 1 MHz
Room
Power Supplies
Power Supply Current
I+
Room
Full
Negative Supply Current
I-
VIN = 0 V, or V+
Room
Full
Ground Current
IGND
Room
Full
Typ.c
95
77
35
45
0.24
- 57
- 93
442
0.09
2.5
6.4
11.7
0.001
- 0.001
- 0.001
- 40 °C to + 125 °C - 40 °C to + 85 °C
Min.d Max.d Min.d Max.d Unit
130
130
190
160
108
108
161
131
ns
76
76
112
88
5
5
pC
dB
MHz
%
pF
0.5
0.5
1
1
- 0.5
-1
- 0.5
-1
µA
- 0.5
-1
- 0.5
-1
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 69901
S10-1815-Rev. D, 02-Aug-10