DG636_10 Datasheet, PDF (10/13 Pages) Vishay Siliconix – 0.5 pC Charge Injection, 100 pA Leakage, Dual SPDT Analog Switch

DG636
Vishay Siliconix
TEST CIRCUITS
Channel
Select
Rg
V_g
V⁺
V⁺
A0
A1
SxA or SxB
ENABLE
GND
D1 or D2
V^-
V^-
V_O
C_L
1 nF
t_r < 5 ns
t_f < 5 ns
V_CC
V_ENABLE
OFF
0V
ON
OFF
V_O
ΔV_O
Charge Injection = ΔV_O X C_L
Figure 4. Charge Injection
V+
Network Analyzer
V+
V_IN
A0
S1A or S2A
A1
R_g = 50 Ω
V_g
V+
ENABLE
D1 or D2
V_OUT
GND
V-
50 Ω
V-
Insertion Loss = 20 log ^VOUT
V_IN
Figure 5. Insertion Loss
V⁺
Network Analyzer
V⁺
V_IN
A0
SxA or SxB
A1
R_g = 50 Ω
V_g
ENABLE
GND
D1 or D2
V-
V_OUT
50 Ω
V-
Off Isolation = 20 log ^VOUT
V_IN
Figure 6. Off-Isolation
50 Ω
V+
Network Analyzer
V+
VIN
A0
S1A or S2A
A1
Vg
R_g = 50
D1 or D2
VOUT
V+
ENABLE S1B or S2B
GND
V-
50 Ω
V-
Cross Talk = 20 log ^VOUT
VIN
V+
Channel
Select
V+
V+
A0
S1A or S2A
|
A1
to
|
S2A or S2B
ENABLE
GND
D1 or D2
V-
V-
Impedance
Analyzer
Figure 7. Crosstalk
Figure 8. Source/Drain Capacitance
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69901.
www.vishay.com
10
Document Number: 69901
S10-1815-Rev. D, 02-Aug-10