VS-VSK.170PBF Datasheet, PDF (8/12 Pages) Vishay Siliconix – Electrically isolated base plate

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VS-VSK.170PbF, VS-VSK.250PbF Series
Vishay Semiconductors
2000
1800
1600
1400
1200
1000
800
600
400
200
0
0
120°
(Rect)
3 x VSK.250.. series
three phase bridge
connected
T_J = 130 °C
0.05 _K/W
00..0068 _{KK/ /WW}
0.1 _{K/ W}
00..1126KK//WW
0.20 _{K/ W}
0.25 _{K/ W}
100 200 300 400 500 600 700 20 40 60 80 100 120
Total Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 18 - On-State Power Loss Characteristics
10 000
1000
T_J = 25 °C
T_J = 130 °C
VSK.170 series
per junction
100
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Instantaneous Forward Voltage (V)
Fig. 19 - On-State Voltage Drop Characteristics
1800
1600
1400
VSK.170.. series
T_J = 130 °C
per junction
1200
1000
800
600
I_TM = 800 A
500 A
300 A
200 A
100 A
50 A
400
200
0 10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of On-state Current - di/dt (A/µs)
Fig. 21 - Reverse Recovery Charge Characteristics
10 000
1000
T_J = 25 °C
T_J = 130 °C
VSK.250 series
per junction
100
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
Instantaneous Forward Voltage (V)
Fig. 20 - On-State Voltage Drop Characteristics
2400
2200
2000
VSK.250.. series
TT_JJ ==131300°C°C
Ppeer rJjuncttiioonn
1800
1600
1400
I_TM = 800 A
500 A
300 A
200 A
100 A
1200
50 A
1000
800
600
400
200
0 10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of On-state Current - di/dt (A/µs)
Fig. 22 - Reverse Recovery Charge Characteristics
Revision: 09-Feb-17
8
Document Number: 94417
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