 English |
|
|
|
|
|
|
|
| VS-VSK.170PBF Datasheet, PDF (2/12 Pages) Vishay Siliconix – Electrically isolated base plate | |||
| |||
| ◁ |
www.vishay.com
VS-VSK.170PbF, VS-VSK.250PbF Series
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER VOLTAGE
CODE
04
08
10
VS-VSK.170-
12
14
16
04
08
10
12
VS-VSK.250-
14
16
18
20
VRRM/VDRM, MAXIMUM REPETITIVE
PEAK REVERSE AND OFF-STATE
BLOCKING VOLTAGE
V
400
800
1000
1200
1400
1600
400
800
1000
1200
1400
1600
1800
2000
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
500
900
1100
1300
1500
1700
500
900
1100
1300
1500
1700
1900
2100
IRRM/IDRM
AT 130 °C
MAXIMUM
mA
50
50
60
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current ï
at case temperature
Maximum RMS on-state current
Maximum peak, one-cycle on-stateï
non-repetitive, surge current
SYMBOL
IT(AV)
IT(RMS)
ITSM
Maximum I2t for fusing
I2t
Maximum I2ït for fusing
I2ït
Low level value or threshold voltage
VT(TO)1
High level value of threshold voltage
VT(TO)2
Low level value on-state slope resistance
rt1
High level value on-state slope resistance rt2
Maximum on-state voltage drop
VTM
Maximum holding current
IH
Maximum latching current
IL
TEST CONDITIONS
VSK.170 VSK.250 UNITS
180° conduction, half sine wave
170
250
A
85
85
°C
As AC switch
377
555
t = 10 ms
t = 8.3 ms
No voltageï
reapplied
5100
8500
5350
8900
A
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % VRRMï
reapplied
No voltageï
reapplied
100 % VRRMï
reapplied
Sinusoidalï
half wave,ï
initial TJ = ï
TJ maximum
4300
4500
131
119
92.5
84.4
7150
7500
361
330
255
233
kA2s
t = 0.1 ms to 10 ms, no voltage reapplied
1310
3610 kA2ïs
(16.7 % x ï° x IT(AV) < I < ï° x IT(AV)), ï
TJ = TJ maximum
0.89
0.97
V
(I > ï° x IT(AV)), TJ = TJ maximum
1.12
1.00
(16.7 % x ï° x IT(AV) < I < ï° x IT(AV)), ï
TJ = TJ maximum
1.34
0.60
mï
(I > ï° x IT(AV)), TJ = TJ maximum
0.96
0.57
ITM = ï° x IT(AV), TJ = TJ maximum, 180° conduction,ï
average power = VT(TO) x IT(AV) + rf x (IT(RMS))2
1.60
1.44
V
Anode supply = 12 V, initial IT = 30 A, TJ = 25 °C
Anode supply = 12 V, resistive load = 1 ï,ï
gate pulse: 10 V, 100 μs, TJ = 25 °C
500
500
mA
1000
1000
Revision: 09-Feb-17
2
Document Number: 94417
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese