VS-VSK.170PBF Datasheet, PDF (4/12 Pages) Vishay Siliconix – Electrically isolated base plate

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VS-VSK.170PbF, VS-VSK.250PbF Series
Vishay Semiconductors
R CONDUCTION PER JUNCTION
DEVICES
SINUSOIDAL CONDUCTION AT T_J MAXIMUM
180°
120°
90°
60°
30°
RECTANGULAR CONDUCTION AT T_J MAXIMUM
180°
120°
90°
60°
30°
VSK.170-
0.009
0.010
0.010
0.020
0.032
0.007
0.011
0.015
0.020
0.033
VSK.250-
0.009 0.010 0.014 0.020 0.032
0.007
0.011
0.015
0.020
0.033
Note
• Table shows the increment of thermal resistance R_thJC when devices operate at different conduction angles than DC
UNITS
K/W
130
VSK.170.. series
120
R_thJC (DC) = 0.17 K/W
110
Conduction Angle
100
90
30°
80
60°
90°
70
120°
180°
60
0
40
80 120 160 200
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
300
180°
120°
250
90°
60°
200
30°
150 ^{RMS limit}
100
Conduction angle
VSK.170.. series
50
per junction
T_J = 125° C
0
0
40
80
120 160 200
Average On-state Current (A)
Fig. 3 - On-State Power Loss Characteristics
130
VSK.170.. series
120
R_thJC (DC) = 0.17 K/W
110
100
Conduction Period
90
30°
80
60°
90°
120°
70
180°
DC
60
0 50 100 150 200 250 300
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
350
DC
300 ^180°
120°
90°
250
60°
30°
200 _{RMS limit}
150
100
50
0
0
Conduction period
VSK.170.. series
per junction
T_J = 125°C
50 100 150 200 250 300
Average On-state Current (A)
Fig. 4 - On-State Power Loss Characteristics
Revision: 09-Feb-17
4
Document Number: 94417
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