VS-SD453N Datasheet, PDF (8/11 Pages) Vishay Siliconix – High voltage ratings up to 2500 V

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VS-SD453N/R Series
Vishay Semiconductors
1E4
1E3
1
0.8
0.6
0.4
10 joules per pulse
46
2
0.2
0.1
1E2
1E1
SD453N/ R...S30 Series
Sinusoidal Pulse
T_J= 150°C, VRRM = 800V
tp
dv/ d t = 1000V/ µs
1E2
1E3
1E4
Pulse Basewidth (µs)
Fig. 30 - Maximum Total Energy Loss
Per Pulse Characteristics
1E4
6000
1000
400
200 ₁₀₀
50 Hz
1500
2000
1E3
3000
4000
6000
SD453N/ R..S30 Series
Sinusoida l Pulse
T_C= 70°C, V_RRM = 800V
tp
dv/ d t = 1000V/ us
1E2
1E1
1E2
1E3
1E4
Pulse Basewidth (µs)
Fig. 31 - Frequency Characteristics
1E4
1E4
tp
200 100 50 Hz
1E3
400
600
1000
1E2
1E1
2000
3000
4000
SD453N/ R..S30 Series
Trapezoidal Pulse
T = 70°C, V_RRM = 800V
dv/ dt = 1000V/ us,
di/ dt = 300A/ us
1E2
1E3
1E4
Pulse Basewidth (µs)
Fig. 33 - Frequency Characteristics
1E4
10 joules per p ulse
6
4
2
1
1E3
0.8
0.6
0.4
SD453N/ R..S30 Series
Tra pezoidal Pulse
T_J= 150°C, VRRM = 800V
tp
dv/ dt = 1000V/ µs; di/ dt = 100A/ µs
1E2
1E1
1E2
1E3
1E4
Pulse Basewidth (µs)
Fig. 34 - Maximum Total Energy Loss
Per Pulse Characteristics
1E4
10 joules per pulse
6
4
2
1E3
1
0.8
0.6
SD453N/ R..S30 Series
Trapezoidal Pulse
T_J = 150°C, V_RRM = 800V
tp
dv/ dt = 1000V/ µs; di/ dt = 300A/ µs
1E2
1E1
1E2
1E3
1E4
Pulse Basewidth (µs)
Fig. 32 - Maximum Total Energy Loss
Per Pulse Characteristics
tp
1E3
1E2
1E1
600 ^{400 200 100 50 Hz}
1000
1500
2000
3000
4000
SD453N/ R..S30 Series
Trapezoidal Pulse
T_C= 70°C, VRRM = 800V
dv/ dt = 1000V/ us,
di/ dt = 100A/ us
1E2
1E3
1E4
Pulse Basewidth (µs)
Fig. 35 - Frequency Characteristics
Revision: 21-Jan-14
8
Document Number: 93176
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