VS-SD453N Datasheet, PDF (7/11 Pages) Vishay Siliconix – High voltage ratings up to 2500 V

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VS-SD453N/R Series
Vishay Semiconductors
1E4
2
1
0.6
0.4
10 joules per p ulse
46
1E3
0.2
0.1
1E2
1E1
SD453N/ R..S20 Series
Sinusoidal Pulse
TJ = 150°C, VRRM = 800V
tp
dv/ dt = 1000V/ µs
1E2
1E3
1E4
Pulse Basewidth (µs)
Fig. 24 - Maximum Total Energy Loss
Per Pulse Characteristics
1E4
1E3
1000
1500
600
400
200
100
50 Hz
2000
3000
4000
6000
SD453N/R..S20 Series
Sinusoidal Pulse
T_C= 70°C, V_RRM = 800V
tp
dv/ d t = 1000V/ us
10000
1E4
tp
1E3
1E2
1E1
600 ^{400 200}
1000
1500
100 _{50 Hz}
2000
3000
4000
6000
SD453N/R..S20 Series
Tra pezoidal Pulse
T_C= 70°C, V_RRM = 800V
d v/ dt = 1000V/us,
d i/ dt = 300A/ us
1E2
1E3
1E4
Pulse Basewidth (µs)
Fig. 27 - Frequency Characteristics
1E4
SD453N/ R..S20 Series
Trapezoidal Pulse
T_J = 150°C, V_RRM = 800V
dv/ d t = 1000V/ µs
di/ dt = 100A/ µs
10 joules per pulse
6
4
2
1
1E3
tp
0.6
0.4
0.2
1E2
1E1
1E2
1E3
1E4
Pulse Basewidth (µs)
Fig. 25 - Frequency Characteristics
1E4
1E2
1E1
1E2
1E3
1E4
Pulse Basewidth (µs)
Fig. 28 - Maximum Total Energy Loss
Per Pulse Characteristics
1E4
10 joules per pulse
6
4
2
1
0.8
1E3
0.6
0.4
SD453N/ R..S20 Series
Trapezoidal Pulse
T_J = 150°C, VRRM = 800V
tp
dv/ dt = 1000V/ µs; d i/ dt = 300A/ µs
1E2
1E1
1E2
1E3
1E4
Pulse Basewidth (µs)
Fig. 26 - Maximum Total Energy Loss
Per Pulse Characteristics
tp
1E3
1E2
1E1
1000
600 _{400 200}
1500
2000
100 50 Hz
3000
4000
6000
SD453N/ R..S20 Series
Trapezoida l Pulse
T_C= 70°C, V_RRM = 800V
dv/ dt = 1000V/ us,
di/ dt = 100A/ us
1E2
1E3
1E4
Pulse Basewidth (µs)
Fig. 29 - Frequency Characteristics
Revision: 21-Jan-14
7
Document Number: 93176
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