VS-SD453N Datasheet, PDF (6/11 Pages) Vishay Siliconix – High voltage ratings up to 2500 V

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6
SD453N/ R..S20 Series
5.5
T_J= 150 °C; V_r > 100V
5
4.5
I_FM = 1000 A
Sine Pulse
4
500 A
3.5
150 A
3
2.5
2
10
100
1000
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 18 - Recovery Time Characteristics
800
I_FM = 1000 A
700
Sine Pulse
600
500 A
500
400
150 A
300
200
100
0
0
SD453N/ R..S20 Series
T_J= 150 °C; V _r > 100V
50 100 150 200 250 300
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 19 - Recovery Charge Characteristics
450
I_FM = 1000 A
400
Sine Pulse
350
500 A
300
150 A
250
200
150
100
SD453N/ R..S20 Series
50
T_J= 150 °C; V_r > 100V
0
0 50 100 150 200 250 300
Rate Of Fall Of Forwa rd Current - di/ dt (A/ µs)
Fig. 20 - Recovery Current Characteristics
VS-SD453N/R Series
Vishay Semiconductors
7
SD453N/ R..S30 Series
6.5
T_J= 150 °C, V_r > 100V
6
5.5
5
I_FM = 1000 A
Sine Pulse
4.5
500 A
4
150 A
3.5
3
2.5
2
10
100
1000
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 21 - Recovery Time Characteristics
1200
1000
I_FM = 1000 A
Sine Pulse
800
500 A
600
150 A
400
200
SD453N/ R..S30 Series
T_J = 150 °C; V_r > 100V
0
0 50 100 150 200 250 300
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 22 - Recovery Charge Characteristics
550
500
I_FM = 1000 A
Sine Pulse
450
400
500 A
350
150 A
300
250
200
150
100
SD453N/ R..S30 Series
T_J= 150 °C; V_r > 100V
50
0
0 50 100 150 200 250 300
Rate Of Fa ll Of Forwa rd Current - d i/ dt (A/ µs)
Fig. 23 - Recovery Current Characteristics
Revision: 21-Jan-14
6
Document Number: 93176
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